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| inchange semiconductor product specification silicon pnp power transistors 2SB834 description ? with to-220 package ? low collector saturation voltage ? complement to type 2sd880 applications ? audio frequency power amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -7 v i c collector current -3 a i b base current -0.5 a t a =25 ?? 1.5 p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB834 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br) ceo collector-emitter breakdown voltage i c =-50ma ; i b =0 -60 v v be base-emitter on voltage i c =-0.5a ; v ce =-5v -0.7 -1.0 v v cesat collector-emitter saturation voltage i c =-3a;i b =-0.3a -0.5 -1.0 v i cbo collector cut-off current v cb =-60v;i e =0 -0.1 ma i ebo emitter cut-off current v eb =-7v; i c =0 -0.1 ma h fe-1 dc current gain i c =-0.5a ; v ce =-5v 60 200 h fe-2 dc current gain i c =-3a ; v ce =-5v 20 c ob collector output capacitance i e =0; v cb =-10v; f=1mhz 150 pf f t transition frequency i c =-0.5a ; v ce =-5v 9 mhz switching times t on turn-on time 0.4 | s t s storage time 1.7 | s t f fall time v cc =-30v; r l =15 |? i b1 =-i b2 =-0.2a 0.5 | s ? h fe-1 classifications o y 60-120 100-200 inchange semiconductor product specification 3 silicon pnp power transistors 2SB834 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon pnp power transistors 2SB834 |
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